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Silicon Carbide
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Silicon Carbide Physical Property
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Silicon Carbide Physical Property

Chinatungsten Online offers high quality and low cost silicon carbide materials with the following key characteristics:

1. Large melting furnace, longer melting time, lead to more crystallization, bigger crystals, higher purity and less impurities.
2. Good hardness, longer life.
3. Chemical washed and water washed, good cleanness.
4. Special treated products get higher purity, better toughness, and better grinding effect.

Silicon Carbide (SiC) Physical Property
Technical parameter	Unit	RBSiC	SSiC	Sic+C	Ssic+C	Qssic+C
Content of Sic	%	≥90	≥98	≥85	≥92	≥90
Free Si	%	≤10	≤1	≤12	/	/
Elastic Modulus	GPa	≥400	≥410	≥350	≥360	≥180
Temperature	°C	1300	1400	1300	1400	1400
Hardness	HS	110	115	≥105	≥110	≥100
Porosity Rate	%	<0.3	<0.2	<0.5	<0.5	<5
Density	g/cm3	3.00~3.05	>3.10	2.69-2.90	2.70-3.0	2.65
Compressive Strength	MPa	>2200	>2500	>1400	>1600	>800
Fractural Strength	MPa	>350	>380	>150	>160	>100
Coefficient of Heat Expansion	10-6/°C	4	4.2	3.50	3.00	2.50

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